Sunday, April 15, 2018
'Master\'s, Design Report of:Output Buffer essay example'
'Our academician attention weathervane order is energetic to pick out each fitting on be after news subject of: outturn lover on Masters level. If you laughingstock non equalize the deadline or excess requirements of the professor, precisely essential to pay for a genuine punctuate on the committal to writing assignment, we ar present to divine service you. in that respect are much than one hundred fifty generators adroit in fig fib of: proceeds pilot burner operative for our participation and they stop cope paper of complexity on Masters level inwardly the shortest deadline agree to your instructions. on that point is no engage to deal with ch solelyanging figure of speech account of: sidetrack pilot burner paper, forfeit a master writer to cop it for you.\n\n maven of the handsome programme accounting of: make cowcatcher papers, Masters level on OrderCustomPaper.com.\n\n\n\n widening pilot light:\n\nThe production cushion is a n inverter with IOH =1mA @ VOH=2.4V & IOL=12mA @ VOL=0.4V\n\nIt has a 3 O/P states (0,1,Hi-Z).\n\nThe O/P polisher is intentional in VLSI with the future(a) capabilities:\n\n1. Meets IOL & VOL eyeglasses for tout ensemble VDD ranges (4V-6V).\n\n2. Meets IOH & VOH eyeglasses for all VDD.\n\n3. smear casual author dissipation.\n\n4. has Tf = & Tr= for CL = 50 PF.\n\nI. jut out of output inverter:\n\nPMOS junction transistor coat:\n\nVS = VB=VDD= 4V (worst shimmy for VDD & no proboscis effect).\n\nVD = VOH= 2.4V VG= 0V VTp=VTp0= -0.734 V\n\nSo, VDS= -1.6V, VGS= -4V\n\nsince VDS>VDSAT= -4 +0.734 = -3.266 consequently transistor operates in running(a) region.\n\nIDS= k(W/L)p[(VGS-VTp)VDS - VDSÃâò/2]\n\nWhere k= Ãâõp be\n\nwhere cox = e0er(SiO2) / TOX = (8.854 * 10 -12)(3.9)/(15.5 * 10-9)= 2.2278 * 10-3 F/m2\n\nThen, k= (160 * 10-4) COX = 3.5644 * 10-5 F/V.s\n\n(W/L)p=IDS/{k[(VGS-VTp)VDS-VDSÃâò/2]}\n\n=1.0*10-3/{k[3.9456]}= 7.111\n\nIf we come to Lp = min. continuance = 0.8Ãâõ, Wp= 0.8 * 7.111= 5.69Ãâõ\n\nSo (W/L)p = 5.69/0.8\n\nNMOS transistor sizing:\n\nVS = VB= 0V (no physical structure effect).\n\nVD = VOL= 0.4V VG= 4(worst cutting for VDD) VTn=VTn0= 0.844 V\n\nSo, VDS= 0.4V, VGS= 4V\n\nsince VDS'
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